半导体芯片化学机械抛光过程中材料去除机理研究进展

就国内外关于集成电路芯片化学机械抛光(CMP)材料去除机理研究的现状和进展进行了评述，总结了集成电路芯片常用介电材料二氧化硅以及导电互连材料钨、铝及铜的化学机械抛光研究现状和进展，进而分析了化学机械抛光过程中化学作用同机械作用的协同效应，指出关于芯片化学机械抛光的材料去除机理尚存在争议，因此有必要在CMP研究领域引入原子力显微镜和电化学显微镜等先进分析测试设备和相关技术，以便在深入揭示CMP过程中材料去除机理的基础上，为更好地控制CMP过程和提高CMP效率提供科学依据．     

Permeability Effects of Turbulent Flow Through a Porous Insert in a Backward-Facing-Step Channel

In the present work, a k– model, based on the work of Lee and Howell (Proceedings of the ASME-JSME Thermal Engineering Hawaii, 1987), is rigorously derived based on time average of spatially averaged Navier–Stokes equations. The model is then employed to solve for a flow in a backward-facing step channel with a porous insert. The numerical solver is modified from the STREAM code (Lien and Leschziner, Comput. Meth. Appl. Mech. Eng. 114 (1994a) 123–148), and it has been validated against the experimental data of Seegmiller and Driver (AIAA Journal 23 (1985) 163–171). The code is then used to perform simulation for cases with a porous insert. The resistance of the porous insert can be altered by changing its permeability (), Forchheimers constant (F), or thickness (b). The goal is to examine the influence of each parameter on the resulting flow and turbulent kinetic energy (k) distributions. It is discovered that, by increasing the resistance of the insert, flow eventually enters a transitional regime towards relaminarization. This is due to the contribution of Darcys and Forchheimers terms in the governing equations, and modifying these two terms changes the levels of P_k and, hence, k and . Generally speaking, lowering or raising F results in a greater suppression of P_k than , causing the flow to relaminarize. Meanwhile, if the pore size is reasonably large to sustain turbulence within the porous media, increasing b reduces but does not eliminate the turbulent activity in the porous insert.     

Enabling arbitrary wavelength frequency combs on chip

A necessary condition for generation of bright soliton Kerr frequency combs in microresonators is to achieve anomalous group velocity dispersion (GVD) for the resonator modes. This condition is hard to implement in the visible as well as ultraviolet since the majority of optical materials are characterized with large normal GVD in these wavelength regions. We overcome this challenge by borrowing ideas from strongly dispersive coupled systems in solid state physics and optics. We show that photonic compound ring resonators can possess large anomalous GVD at any desirable wavelength, even if each individual resonator is characterized with normal GVD. Based on this concept, we design a mode‐locked frequency comb with thin‐film silicon nitride compound ring resonators in the vicinity of the rubidium D₁ line (794.6 nm) and propose to use this optical comb as a flywheel for chip‐scale optical clocks.

     

Six‐wave mixing induced by free‐carrier plasma in silicon nanowire waveguides

Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.

     

Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications

The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films were determined by X-Ray Diffraction (XRD) analysis and Raman spectroscopy. Surface and cross-sectional morphology of a-Si/c-Si and S-nC a-Si/c-Si heterojunctions were investigated by Field Emission Scanning Electron Microscopy (FE-SEM). Sculptured thin films demonstrate potential for significant nanoscale applications in the area of thin film technology. The electrical and photovoltaic properties of these heterojunctions have been investigated by means of dc current–voltage (I–V) measurements at room temperature in dark and light conditions. The S-nC STFs' performance has been found to be improvable on changing the morphology of the thin film. We have found that, the porous morphology of this structure improves the photosensitivity features in photovoltaic devices and solar cell technology. We gained a high open voltage value, such as 900 mV in S-nC a-Si/c-Si thin film, without any doping process.     

Progress on accurate measurement of the Planck constant:Watt balance and counting atoms

The Planck constant h is one of the most significant constants in quantum physics.Recently,the precision measurement of the value of h has been a hot issue due to its important role for the establishment of both a new SI and a revised fundamental physical constant system.Up to date,two approaches,the watt balance and counting atoms,have been employed to determine the Planck constant at a level of several parts in 108.In this paper,the principle and progress on precision measurement of the Planck constant using watt balance and counting atoms at national metrology institutes are reviewed.Further improvement in determining the Planck constant and possible developments of a revised physical constant system in future are discussed.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Thermal stability of amorphous SiOC/crystalline Fe composite

We examined the thermal stability of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite by in situ and ex situ annealing. The Fe/SiOC multilayer thin films were grown via magnetron sputtering with controlled length scales on a surface-oxidized Si (100) substrate. These Fe/SiOC multilayers were in situ or ex situ annealed at temperature of 600 °C or lower. The thin multilayer sample (~10 nm) was observed to have a layer breakdown after 600 °C annealing. Diffusion starts from low groove angle triple junctions in Fe layers. In contrast, the thick multilayer structure (~70 nm) was found to be stable and an intermixed layer (Fe_xSi_yO_z) was observed after 600 °C annealing. The thickness of the intermixed layer does not vary as annealing time goes up. The results suggest that the Fe_xSi_yO_z layer can impede further Fe, Si and O diffusion, and assists in maintaining morphological stability.     

Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl₃ diffusion process and an exploration of the effect of the refractive index of the SiN_x. The n⁺ silicon passivating contact with SiN_x /SiO_x double layer achieves a better result than a single SiN_x or SiO_x layer, giving a recombination current parameter of ～7 fA/cm² and a contact resistivity of ～0.005 Ω cm², respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)